Typical Characteristics T J = 25°C unless otherwise noted
60
3.5
V GS = -3.0V
50
40
30
V GS = -10V
V GS = - 6V
V GS = -5V
V GS = -4.5V
V GS = -4V
3.0
2.5
2.0
V GS = -4V
V GS = -4.5V
V GS = -5V
V GS = -6V
PULSE DURATION = 80 μ s
20
DUTY CYCLE = 0.5%MAX
1.5
10
V GS = - 3.0V
1.0
V GS = -10V
PULSE DURATION = 80 μ s
0
0
1 2 3 4
5
0.5
0
10
DUTY CYCLE = 0.5%MAX
20 30 40 50
60
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.8
-I D , DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
120
1.6
1.4
1.2
I D = -6.7A
V GS = -10V
100
80
I D = -6.7A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5%MAX
T J = 125 o C
60
1.0
0.8
40
T J = 25 o C
0.6
-50
-25
0 25 50 75 100 125
150
20
2
3 4 5 6 7 8 9
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
60
PULSE DURATION = 80 μ s
30
V GS = 0V
50
40
30
DUTY CYCLE = 0.5%MAX
T J = 150 o C
T J = 25 o C
10
1
T J = 150 o C
T J = 25 o C
20
10
T J = -55 o C
T J = -55 o C
0
1
2 3 4 5
6
0.1
0.4
0.6
0.8
1.0
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
- V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDD4243 Rev.C1
3
www.fairchildsemi.com
相关PDF资料
FDD4685_F085 MOSFET P-CH 40V 8.4A DPAK
FDD5353 MOSFET N-CH 60V 11.5A DPAK
FDD5612 MOSFET N-CH 60V 5.4A DPAK
FDD5614P MOSFET P-CH 60V 15A DPAK
FDD5670 MOSFET N-CH 60V 52A D-PAK
FDD5680 MOSFET N-CH 60V 8.5A D-PAK
FDD5690 MOSFET N-CH 60V 30A D-PAK
FDD5N50NZFTM MOSFET N-CH 500V DPAK
相关代理商/技术参数
FDD4505C 制造商:ELMEC 功能描述: 制造商:ELMEC 功能描述:Electronic Component
FDD45AN06LA0 功能描述:MOSFET 60V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD45AN06LA0 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDD45AN06LA0_F085 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD4685 功能描述:MOSFET -40V P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD4685_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -32A, 35mΩ
FDD4685_F085 功能描述:MOSFET Trans MOS P-Ch 40V 8.4A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD4685-CUT TAPE 制造商:FAIRCHILD 功能描述:FDD4685 Series 40 V 27 mOhm P-Channel PowerTrench Mosfet TO-252